transistor (npn) features ? high dc c urrent g ain applications ? general purpo se amplification m aximum r atings (t a =25 unless otherwise noted ) symbol parameter value unit v cbo collector - base voltage 120 v v ceo collector - emitter voltage 120 v v ebo emitter - base voltage 5 v i c collector current 50 m a p c collector power dissipation 150 m w r ja thermal resistance from j u nction to a mbient 833 /w t j junction temperature 150 t stg storage temperature - 55 + 150 electrical characteristics ( t a =25 unless otherwise specified) p arameter symbol test conditions m in t yp m ax u nit collector - base breakdown voltage v (br) cbo i c = 1 0 0 a , i e =0 120 v collector - emitter breakdown voltage v (br) c e o i c = 1 ma, i b =0 120 v emitter - base breakdown voltage v (br)eb o i e = 1 0 0 a , i c =0 5 v collector cut - off current i cbo v cb = 120 v, i e =0 50 n a emitter cut - off current i ebo v eb = 5 v , i c =0 50 n a h fe(1) * v ce = 6 v, i c = 1m a 135 900 dc current gain h fe(2) v ce = 6 v, i c = 0.1m a 100 collector - emitter saturation voltage v ce(sat) i c = 10m a, i b = 1 ma 0.3 v base - emitter voltage v b e v ce = 6 v, i c = 1m a 0.55 0.65 v transition frequency f t v ce = 6 v, i c = 1 ma 50 mhz collector output capacitance c ob v cb = 30 v, i e =0, f=1mhz 2.5 pf * p ulse test: p ulse w idth 3 50 s, d uty cycle 2.0%. classification of h fe(1) rank d15 d16 d17 d18 range 135 C 270 200 C 400 300 C 600 450 C 900 marking d15 d16 d17 d18 so t C 3 23 1. base 2. emitter 3. collector 1 www.htsemi.com semiconductor jinyu 2 s c41 80
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